Surface Recombination Concept as Applied to Determinate Silicon Solar Cell Base Optimum Thickness with Doping Level Effect

• 作者: El Hadji Sow Grégoire Sissoko Hamet Yoro Ba Ibrahima Diatta Mamadou Lamine Ba Masse Samba Diop Ndeye Thiam Oulymata Mballo Youssou Traore
• 来源期刊: 凝固态物理国际期刊(英文)
• 学科: 工学
• 关键词: Silicon Solar Cell Surface Recombination VELOCITY DIFFUSION COEFFICIENT DOPING Rate BASE Thickness
• 年，卷（期）: 2019,（4）
• 页码范围: 102-111
• 页数: 10页
• 分类号: TG1

摘要

New expressions of back surface recombination of excess minority carriers in the base of silicon solar are expressed dependent on both, the thickness and the diffusion coefficient which is in relationship with the doping rate. The optimum thickness thus obtained from the base of the solar cell allows the saving of the amount of material needed in its manufacture without reducing its efficiency.