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摘要:
For square-step quantum wells (SSQWs) and graded-step quantum wells (GSQWs),the nonlinear optical rectification (NOR),second harmonic generation (SHG) and third harmonic generation (THG) coefficients under an intense laser field (ILF) are analyzed.The found results indicate that ILF can ensure a vital influence on the shape and height of the confined potential profile of both SSQWs and GSQWs,and alterations of the dipole moment matrix elements and the energy levels are adhered on the profile of the confined potential.According to the results,the potential profile and height of the GSQWs are affected more significantly by ILF intensity compared to SSQWs.These results indicate that NOR,SHG and THG coefficients of SSQWs and GSQWs may be calibrated in a preferred energy range and the magnitude of the resonance peak (RP) by tuning the ILF parameter.It is feasible to classify blue or red shifts in RP locations of NOR,SHG and THG coefficients by varying the ILF parameter.Our results can be useful in investigating new ways of manipulating the opto-electronic properties of semiconductor QW devices.
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篇名 Nonlinear Optical Rectification, Second and Third Harmonic Generations in Square-Step and Graded-Step Quantum Wells under Intense Laser Field
来源期刊 中国物理快报(英文版) 学科
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年,卷(期) 2019,(6) 所属期刊栏目
研究方向 页码范围 93-97
页数 5页 分类号
字数 语种 英文
DOI 10.1088/0256-307X/36/6/067801
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中国物理快报(英文版)
月刊
0256-307X
11-1959/O4
16开
北京中关村中国科学院物理研究所内
1984
eng
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14318
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