We investigated the transmission characteristics of Cu/CNT composite Through-silicon via (TSV)interconnects.The equivalent lumped-element circuit model was established,with the effective conductivity employed for impedance extraction.The impacts of CNT filling ratio,temperature,and other geometrical parameters on the performance were examined.The sensitivity analysis of Cu/CNT composite TSVs was carried out.The electrical performance of Cu/CNT composite TSVs were optimized by utilizing low-permittivity dielectrics or even air-gap.