An Improved Room-Temperature Silicon Terahertz Photodetector on Sapphire Substrates

• 来源期刊: 中国物理快报（英文版）
• 年，卷（期）: 2019,（9）
• 页码范围: 72-75
• 页数: 4页
• 语种: 英文
• DOI: 10.1088/0256-307X/36/9/098501

摘要

We design and fabricate a good performance silicon photoconductive terahertz detector on sapphire substrates at room temperature.The best voltage responsivity of the detector is 6679 V/W at frequency 300 GHz as well as low voltage noise of 3.8nV/Hz1/2 for noise equivalent power 0.57pW/Hz1/2.The measured response time of the device is about 9 μs,demonstrating that the detector has a speed of ＞ 110 kHz.The achieved good performance,together with large detector size (acceptance area is 3μm× 160 μm),simple structure,easy manufacturing method,compatibility with mature silicon technology,and suitability for large-scale fabrication of imaging arrays provide a promising approach to the development of sensitive terahertz room-temperature detectors.