Tunable Perpendicular Magnetic Anisotropy in Off-Stoichiometric Full-Heusler Alloy Co2MnAl

• 来源期刊: 中国物理快报（英文版）
• 年，卷（期）: 2019,（6）
• 页码范围: 79-82
• 页数: 4页
• 语种: 英文
• DOI: 10.1088/0256-307X/36/6/067502

摘要

Off-stoichiometric ful1-Heusler alloy Co2MnAl thin films with different thicknesses are epitaxially grown on GaAs (001) substrates by molecular-beam epitaxy.The composition of the films,close to Co1.65Mn1.35Al (CMA),is determined by x-ray photoelectron spectroscopy and energy dispersive spectroscopy.Tunable perpendicular magnetic anisotropy (PMA) from 3.41Merg/cm3 to 1.88Merg/cm3 with the thickness increasing from 10hm to 30hm is found,attributed to the relaxation of residual compressive strain.Moreover,comparing with the ultrathin CoFeB/MgO used in the conventional perpendicular magnetic tunnel junction,the CMA electrode has a higher magnetic thermal stability with more volume involved.The PMA in CMA films is sustainable up to 300℃,compatible with semiconductor techniques.This work provides a possibility for the development of perpendicular magnetized full-Heusler compounds with high thermal stability and spin polarization.