Study on electronic blocking layer of 403 nm GaN-based vertical cavity surface emitting lasers
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摘要:
In order to obtain good optical characteristics in the GaN-based vertical-cavity surface-emitting laser (VCSEL),different kinds of A1GaN electron blocking layers (EBL) were introduced.These were inserted coherently near the active region to limit electron leakage into the p-doped side.The research was conducted by photonic integrated circuit simulator in three-dimensional (PICS3D).The simulated results reveal that an EBL can improve the optical characteristics of a VCSEL effectively.All the advantages are due to a reduction in the electron leakage in the quantum wells.While the voltage of the five-layer EBLs LD is lower than the voltage of the seven-layer EBLs LD,the output power of the two is approximately the same,so the five-layer EBLs is the best choice for comprehensive structure analysis as the epitaxial structure can be grown more easily on it.