Influence of Both Magnetic Field and Temperature on Silicon Solar Cell Base Optimum Thickness Determination

• 作者: Amary Thiam Gregoire Sissoko Ibrahima Diatta Ibrahima Ly Mamour Amadou Ba Nouh Mohamed Moctar Ould Mohamed Ousmane Sow Richard Mane Sega Gueye Youssou Traore
• 来源期刊: 现代物理(英文)
• 学科: 工学
• 关键词: Silicon Solar Cell Diffusion Coefficient Surface Recombination Velocity OPTIMUM BASE Thickness LORENTZ and Umklapp Processes
• 年，卷（期）: 2019,（13）
• 页码范围: 1596-1605
• 页数: 10页
• 分类号: TG1

摘要

The minority carrier’s recombination velocity at the junction and at the back surface is used for the modeling and determination of the optimum thickness of the base of a silicon solar cell in the static regime, under magnetic field and temperature influence. This study takes into account the Umklapp process and the Lorentz effect on the minority carriers photogenerated in the base.