Reduction of Electron Leakage in a Deep Ultraviolet Nitride Laser Diode with a Double-Tapered Electron Blocking Layer

• 来源期刊: 中国物理快报（英文版）
• 年，卷（期）: 2019,（5）
• 页码范围: 63-66
• 页数: 4页
• 语种: 英文
• DOI: 10.1088/0256-307X/36/5/057301

摘要

A double-tapered AlGaN electron blocking layer (EBL) is proposed to apply in a deep ultraviolet semiconductor laser diode.Compared with the inverse double-tapered EBL,the laser with the double-tapered EBL shows a higher slope effciciency,which indicates that effective enhancement in the transportation of electrons and holes is achieved.Particularly,comparisons among the double-tapered EBL,the inverse double-tapered EBL,the singletapered EBL and the inverse single-tapered EBL show that the double-tapered EBL has the best performance in terms of current leakage.