Improvement of Performance of HfS2 Transistors Using a Self-Assembled Monolayer as Gate Dielectric

• 来源期刊: 中国物理快报（英文版）
• 年，卷（期）: 2019,（6）
• 页码范围: 57-60
• 页数: 4页
• 语种: 英文
• DOI: 10.1088/0256-307X/36/6/067301

摘要

This work details a study based on HfS2 transistors utilizing an n-octadecylphosphonic acid-based self-assembled monolayer (SAM) as the gate dielectric.The fabrication of the SAM-based two-dimensional (2D) material transistor is simple and can be used to improve the quality of the interface of air-sensitive 2D materials.In comparison to HfS2 transistors utilizing a conventional Al2O3 gate insulator by atomic layer deposition,HfS2 transistors utilizing an SAM as the gate dielectric can reduce the operation region from 4 V to 2 V,enhance the field-effect mobility from 0.03 cm2 /Vs to 0.75 cm2 /Vs,improve the sub-threshold swing from 404 m V/dec to 156 m V/dec,and optimize the hysteresis to 0.03 V,thus demonstrating improved quality of the semiconductor/insulator interface.