Silicon on Insulator with Highly Uniform Top Si Fabricated by H/He Coimplantation

• 来源期刊: 中国物理快报（英文版）
• 年，卷（期）: 2019,（6）
• 页码范围: 103-106
• 页数: 4页
• 语种: 英文
• DOI: 10.1088/0256-307X/36/6/068501

摘要

Silicon on insulator with highly uniform top Si is fabricated by co-implantation of H+ and He+ ions.Compared with the conventional ion-slicing process with H implantation only,the co-implanted specimens whose He depth is deeper than H profile have the top Si layer with better uniformity after splitting.In addition,the splitting occurs at the position that the maximum concentration peak of H overlaps with the secondary concentration peak of He after annealing.It is suggested that the H/He co-implantation technology is a promising approach for fabricating fully depleted silicon on insulator.