Theoretical analytic model for RESURF AlGaN/GaN HEMTs

• 来源期刊: 中国物理B（英文版）
• 关键词: RESURF AlGaN/GaN HEMTs two-dimensional analytic model potential distribution electric field distribution
• 年，卷（期）: 2019,（2）
• 页码范围: 391-395
• 页数: 5页
• 语种: 英文
• DOI: 10.1088/1674-1056/28/2/027302

摘要

In this paper, we propose a two-dimensional (2D) analytic model for the channel potential and electric field distribution of the RESURF AlGaN/GaN high electron mobility transistors (HEMTs). The model is constructed by two-dimensional Poisson's equation with appropriate boundary conditions. In the RESURF AlGaN/GaN HEMTs, we utilize the RESURF effect generated by doped negative charge in the AlGaN layer and introduce new electric field peaks in the device channels, thus, homogenizing the distribution of electric field in channel and improving the breakdown voltage of the device. In order to reveal the influence of doped negative charge on the electric field distribution, we demonstrate in detail the influences of the charge doping density and doping position on the potential and electric field distribution of the RESURF AlGaN/GaN HEMTs with double low density drain (LDD). The validity of the model is verified by comparing the results obtained from the analytical model with the simulation results from the ISE software. This analysis method gives a physical insight into the mechanism of the AlGaN/GaN HEMTs and provides reference to modeling other AlGaN/GaN HEMTs device.