Ultra-high voltage 4H-SiC gate turn-off thyristor for low switching time

• 来源期刊: 中国物理B（英文版）
• 关键词: 4H-SiC gate turn-off (GTO) thyristor turn-on turn-off
• 年，卷（期）: 2019,（12）
• 页码范围: 346-354
• 页数: 9页
• 语种: 英文
• DOI: 10.1088/1674-1056/ab4e89

摘要

An ultra-high voltage 4H-silicon carbide (SiC) gate turn-off (GTO) thyristor for low switching time is proposed and analyzed by numerical simulation.It features a double epitaxial p-base in which an extra electrical field is induced to enhance the transportation of the electrons in the thin p-base and reduce recombination.As a result,the turn-on characteristics are improved.What is more,to obtain a low turn-off loss,an alternating p+/n+ region formed in the backside acts as the anode in the GTO thyristor.Consequently,another path formed by the reverse-biased n+-p junction accelerates the fast removal of excess electrons during turn-off.This work demonstrates that the turn-on time and turn-off time of the new structure are reduced to 37 ns and 783.1 ns,respectively,under a bus voltage of 8000 V and load current of 100 A/cm2.