Stacked lateral double-diffused metal-oxide-semiconductor field effect transistor with enhanced depletion effect by surface substrate

• 来源期刊: 中国物理B（英文版）
• 关键词: double substrates surface dielectric trench stacked lateral double-diffused metal-oxide-semiconductor field-effect transistor (ST-LDMOS) breakdown voltage
• 年，卷（期）: 2019,（3）
• 页码范围: 324-328
• 页数: 5页
• 语种: 英文
• DOI: 10.1088/1674-1056/28/3/037201

摘要

A stacked lateral double-diffused metal-oxide-semiconductor field-effect transistor (LDMOS) with enhanced depletion effect by surface substrate is proposed (ST-LDMOS),which is compatible with the traditional CMOS processes.The new stacked structure is characterized by double substrates and surface dielectric trenches (SDT).The drift region is separated by the P-buried layer to form two vertically parallel devices.The doping concentration of the drift region is increased benefiting from the enhanced auxiliary depletion effect of the double substrates,leading to a lower specific on-resistance (Ron,sp).Multiple electric field peaks appear at the corners of the SDT,which improves the lateral electric field distribution and the breakdown voltage (BV).Compared to a conventional LDMOS (C-LDMOS),the BV in the ST-LDMOS increases from 259 V to 459 V,an improvement of 77.22％.The Ron.sp decreases from 39.62 mΩ·cm2 to 23.24 mΩ·cm2 and the Baliga's figure of merit (FOM) of is 9.07 MW/cm2.