Review of gallium oxide based field-effect transistors and Schottky barrier diodes

• 来源期刊: 中国物理B（英文版）
• 关键词: gallium oxide (Ga2O3) field-effect transistors (FETs) Schottky barrier diodes (SBDs)
• 年，卷（期）: 2019,（1）
• 页码范围: 65-82
• 页数: 18页
• 语种: 英文
• DOI: 10.1088/1674-1056/28/1/017105

摘要

Gallium oxide (Ga2O3), a typical ultra wide bandgap semiconductor, with a bandgap of ～ 4.9 eV, critical breakdown field of 8 MV/cm, and Baliga's figure of merit of 3444, is promising to be used in high-power and high-voltage devices. Recently, a keen interest in employing Ga2O3 in power devices has been aroused. Many researches have verified that Ga2O3 is an ideal candidate for fabricating power devices. In this review, we summarized the recent progress of field-effect transistors (FETs) and Schottky barrier diodes (SBDs) based on Ga2O3, which may provide a guideline for Ga2O3 to be preferably used in power devices fabrication.