Short-gate AlGaN/GaN high-electron mobility transistors with BGaN buffer

• 来源期刊: 中国物理B（英文版）
• 关键词: AlGaN/GaN HEMT BGaN back barrier short-channel effects (SCEs)
• 年，卷（期）: 2019,（4）
• 页码范围: 326-331
• 页数: 6页
• 语种: 英文
• DOI: 10.1088/1674-1056/28/4/047302

摘要

Using the semi-insulating property and small lattice constant a of wurtzite BGaN alloy,we propose a BGaN buffer with a B-content of 1％ to enhance two-dimensional electron gas (2DEG) confinement in a short-gate A1GaN/GaN high-electron mobility transistor (HEMT).Based on the two-dimensional TCAD simulation,the direct current (DC) and radio frequency (RF) characteristics of the AlGaN/GaN/B0.01Ga0.99N structure HEMTs are theoretically studied.Our results show that the BGaN buffer device achieves good pinch-off quality and improves RF performance compared with GaN buffer device.The BGaN buffer device can allow a good immunity to shift of threshold voltage for the aspect ratio (LG/d)down to 6,which is much lower than that the GaN buffer device with LG/d=11 can reach.Furthermore,due to a similar manner of enhancing 2DEG confinement,the B0.01 Ga0.99N buffer device has similar DC and RF characteristics to those the AlGaN buffer device possesses,and its ability to control short-channel effects (SCEs) is comparable to that of an Al0.03Ga0.97N buffer.Therefore,this BGaN buffer with very small B-content promises to be a new method to suppress SCEs in GaN HEMTs.