Development of small pixel HgCdTe infrared detectors

• 来源期刊: 中国物理B（英文版）
• 关键词: HgCdTe infrared detector small size pixel readout circuit
• 年，卷（期）: 2019,（3）
• 页码范围: 13-21
• 页数: 9页
• 语种: 英文
• DOI: 10.1088/1674-1056/28/3/037804

摘要

After approximately half a century of development,HgCdTe infrared detectors have become the first choice for high performance infrared detectors,which are widely used in various industry sectors,including military tracking,military reconnaissance,infrared guidance,infrared warning,weather forecasting,and resource detection.Further development in infrared applications requires future HgCdTe infrared detectors to exhibit features such as larger focal plane array format and thus higher imaging resolution.An effective approach to develop HgCdTe infrared detectors with a larger array format size is to develop the small pixel technology.In this article,we present a review on the developmental history and current status of small pixel technology for HgCdTe infrared detectors,as well as the main challenges and potential solutions in developing this technology.It is predicted that the pixel size of long-wave HgCdTe infrared detectors can be reduced to 5 μm,while that of mid-wave HgCdTe infrared detectors can be reduced to 3 μm.Although significant progress has been made in this area,the development of small pixel technology for HgCdTe infrared detectors still faces significant challenges such as flip-chip bonding,interconnection,and charge processing capacity of readout circuits.Various approaches have been proposed to address these challenges,including three-dimensional stacking integration and readout circuits based on microelectromechanical systems.