Preparation of Ga2O3 thin film solar-blind photodetectors based on mixed-phase structure by pulsed laser deposition

• 来源期刊: 中国物理B（英文版）
• 关键词: Ga2O3 mixed-phase solar-blind photodetector pulsed laser deposition
• 年，卷（期）: 2019,（1）
• 页码范围: 178-185
• 页数: 8页
• 语种: 英文
• DOI: 10.1088/1674-1056/28/1/018504

摘要

Gallium oxide (Ga2O3) thin films were deposited on a-Al2O3 (11(ˉ2)0) substrates by pulsed laser deposition (PLD) with different oxygen pressures at 650 ℃. By reducing the oxygen pressure, mixed-phase Ga2O3 films with α and β phases can be obtained, and on the basis of this, mixed-phase Ga2O3 thin film solar-blind photodetectors (SBPDs) were prepared. Comparing the responsivities of the mixed-phase Ga2O3 SBPDs and the single β-Ga2O3 SBPDs at a bias voltage of 25 V, it is found that the former has a maximum responsivity of approximately 12 A/W, which is approximately two orders of magnitude larger than that of the latter. This result shows that the mixed-phase structure of Ga2O3 thin films can be used to prepare high-responsivity SBPDs. Moreover, the cause of this phenomenon was investigated, which will provide a feasible way to improve the responsivity of Ga2O3 thin film SBPDs.