Semiconductor Fluorinated Carbon Nanotube as a Low Voltage Current Amplifier Acoustic Device

• 作者: C. Jebuni-Adanu D. Sakyi-Arthur K. A. Dompreh K. W. Adu N. Mensah R. Edziah S. Y. Mensah
• 来源期刊: 凝固态物理国际期刊(英文)
• 学科: 工学
• 关键词: Carbon NANOTUBE FLUORINATED Acoustoelectric Effect Low VOLTAGE ACOUSTIC Device
• 年，卷（期）: ngtwlgjqkyw_2020,（1）
• 页码范围: 12-25
• 页数: 14页
• 分类号: TB3

摘要

Acoustoelectric effect (AE) in a non-degenerate fluorinated single walled carbon nanotube (FSWCNT) semiconductor was carried out using a tractable analytical approach in the hypersound regime , where q is the acoustic wavenumber and is the electron mean-free path. In the presence of an external electric field, a strong nonlinear dependence of the normalized AE current density , on (?is the electron drift velocity and is the speed of sound in the medium) was observed and depends on the acoustic wave frequency, , wavenumber q, temperature T and the electron-phonon interactions parameter, . When , decreases to a resonance minimum and increases again, where the FSWCNT is said to be amplifying the current. Conversely, when , rises to a maximum and starts to decrease, similar to the observed behaviour in negative differential conductivity which is a consequence of Bragg’s reflection at the band edges at T=300K. However, FSWCNT will offer the potential for room temperature application as an acoustic switch or transistor and also as a material for ultrasound current source density imaging (UCSDI) and AE hydrophone devices in biomedical engineering. Moreover, our results prove the feasibility of implementing chip-scale non-reciprocal acoustic devices in an FSWCNT platform through acoustoelectric amplification.