Ultrafast Magnetization Precession in Perpendicularly Magnetized L10-MnAl Thin Films with Co2MnSi Buffer Layers

• 来源期刊: 中国物理快报（英文版）
• 年，卷（期）: 2020,（5）
• 页码范围: 110-114
• 页数: 5页
• 语种: 英文
• DOI: 10.1088/0256-307X/37/5/058501

摘要

Perpendicularly magnetized L10-MnAl thin films with Co2MnSi buffer layers were prepared on GaAs (001) substrates by molecular-beam epitaxy (MBE).The samples with high crystalline quality show a maximum uniaxial perpendicular magnetic anisotropy constant of 1.4 × 107 erg/cm3.Ultrafast spin dynamics with a magnetization precession frequency up to 200 GHz was investigated by using time-resolved magneto-optical Kerr effect (TRMOKE) measurements,from which the Gilbert damping constant α of epitaxial L10-MnAl thin films is evaluated to be less than 0.0175.This work provides an important reference for analyzing the current-induced magnetization switching process in MnAl-based spintronic devices.