Foreword to the special issue on wide-bandgap (WBG) semiconductors:from fundamentals to applications

• 作者: Zongwei Xu Yidan Tang Mathias Rommel
• 来源期刊: 纳米技术与精密工程（英文）
• 年，卷（期）: 2020,（4）
• 页码范围: 187-188
• 页数: 2页
• 语种: 英文

摘要

The development of new kinds of semiconductor material is a very attractive topic of scientific research and appliations. Graphene is con-sidered as one of the most impressive 2D materials for many applica-tions, like graphene-reinforced metal matrix nanocomposites.1 Wide-bandgap (WBG) semiconductors have received widespread attention in recent years because of their superior physical properties such as large band gap, high carrier mobility, and high thermal conductivity. Represented by silicon carbide (SiC) and gallium nitride (GaN), WBG semiconductor materials, therefore, can be operated in extreme work-ing environments or conditions such as high temperature, high fre-quency, and high power. 4H-SiC is the most prominent wide-bandgap semiconductor material concerning commercially available power semiconductor devices. Very recently, 4H-SiC has also become very at-tractive for quantum devices. Among the versatile applications of WBG devices, defects play a significant role–either being detrimental to power device performance (e.g., compensation of p-type doping, re-duction of charge carrier mobility, or lifetime) or being essential for quantum effects (e.g., color centers).