Heterostructure and Q-factor engineering for low-threshold and persistent nanowire lasing

• 作者: Stefan Skalsky Yunyan Zhang Juan Arturo Alanis H.Aruni Fonseka Ana M.Sanchez Huiyun Liu Patrick Parkinson
• 来源期刊: 光：科学与应用（英文版）
• 年，卷（期）: 2020,（2）
• 所属期刊栏目: Original Articles
• 页码范围: 384-393
• 页数: 10页
• 语种: 英文

摘要

Continuous room temperature nanowire lasing from silicon-integrated optoelectronic elements requires careful optimisation of both the lasing cavity Q-factor and population inversion conditions. We apply time-gated optical interferometry to the lasing emission from high-quality GaAsP/GaAs quantum well nanowire laser structures, revealing high Q-factors of 1250 ± 90 corresponding to end-facet reflectivities of R=0.73 ± 0.02. By using optimised direct–indirect band alignment in the active region, we demonstrate a well-refilling mechanism providing a quasi-four-level system leading to multi-nanosecond lasing and record low room temperature lasing thresholds (～6μJ cm?2 pulse?1) for Ⅲ–V nanowire lasers. Our findings demonstrate a highly promising new route towards continuously operating silicon-integrated nanolaser elements.