4H-SiC trench MOSFET with an integrated Schottky barrier diode and L-shaped P+ shielding region

• 作者: Bo Zhang Fei Yang Jian Fang Ke Zhang Xiaorong Luo Xu Song
• 来源期刊: 半导体学报（英文版）
• 年，卷（期）: 2020,（10）
• 所属期刊栏目: ARTICLES
• 页码范围: 89-93
• 页数: 5页
• 语种: 英文
• DOI: 10.1088/1674-4926/41/10/102801

摘要

A novel 4H-SiC trench MOSFET is presented and investigated by simulation in this paper.The device features an integrated Schottky barrier diode and an L-shaped P+ shielding region beneath the gate trench and aside one wall of the gate trench (S-TMOS).The integrated Schottky barrier diode works as a free-wheeling diode in reverse recovery and reverse conduction,which significantly reduces reverse recovery charge (Qrr) and reverse turn-on voltage (VF).The L-shaped P+ region effectively shields the coupling of gate and drain,resulting in a lower gate-drain capacitance (Cgd) and date-drain charge (Qgd).Compared with that of conventional SiC trench MOSFET (C-TMOS),the VF and Q2rr of S-TMOS has reduced by 44％ and 75％,respectively,with almost the same forward output current and reverse breakdown voltage.Moreover,the S-TMOS reduces Qgd and Cgd by 32％ and 22％,respectively,in comparison with C-TMOS.

作者信息

序号	姓名	单位	发文数	被引次数	H指数	G指数
1	Xiaorong Luo		1	0	0.0	0.0
2	Ke Zhang		1	0	0.0	0.0
3	Xu Song		1	0	0.0	0.0
4	Jian Fang		1	0	0.0	0.0
5	Fei Yang		1	0	0.0	0.0
6	Bo Zhang		1	0	0.0	0.0