Significant control of metal-insulator transition temperature through catalytic excessive oxygen doping in high-performance vanadium dioxide nanobeam channel

• 来源期刊: 材料科学技术（英文版）
• 年，卷（期）: 2020,（9）
• 页码范围: 96-101
• 页数: 6页
• 语种: 英文

摘要

The strategy of a reliable transition temperature control of vanadium dioxide (VO2) is reported.Rectangular VO2 nanobeams were synthesized by a thermal chemical vapor deposition (TCVD) system.The metal-insulator transition (MIT) temperature increases to above 380 K when the TiO2 ratio of the source is 5 at.％,although the Ti source is not physically doped into VO2 nanobeams.The XPS spectra of the V 2p orbital reveal the excessive oxidation of V after the TCVD processes with a higher TiO2 ratio,indicating that the TiO2 precursor is important in the O-doping of the surface V--O bonds when forming volatile Ti-O gas species.Thus,TiO2 reactants can be used as a VO2 surface chemical modifier to manipulate the MIT transition temperature and maintain a homogenous VO2 phase,which is useful for a Mort device application with a record on/off switching ratio ＞ 104 and Mott transition temperature ＞ 380 K.