The etching process and mechanism analysis of Ta-Sb2Te3 film based on inductively coupled plasma

• 作者: Yongkang Xu Sannian Song Wencheng Fang Chengxing Li Zhitang Song
• 来源期刊: 半导体学报（英文版）
• 年，卷（期）: 2020,（12）
• 所属期刊栏目: ARTICLES
• 页码范围: 13-16,中插1
• 页数: 5页
• 语种: 英文
• DOI: 10.1088/1674-4926/41/12/122103

摘要

Compared to the conventional phase change materials,the new phase change material Ta-Sb2Te3 has the advantages of excellent data retention and good material stability.In this letter,the etching characteristics of Ta-Sb2Te3 were studied by using CF4/Ar.The results showed that when CF4/Ar =25/25,the etching power was 600 W and the etching pressure was 2.5 Pa,the etching speed was up to 61 nm/min.The etching pattern of Ta-Sb2Te3 film had a smooth side wall and good perpendicularity (close to 90°),smooth surface of the etching (RMS was 0.51nm),and the etching uniformity was fine.Furthermore,the mechanism of this etching process was analyzed by X-ray photoelectron spectroscopy (XPS).The main damage mechanism of ICP etching in CF4/Ar was studied by X-ray diffraction (XRD).