Structure,morphology and electrical resistance of WxN thin film synthesized by HFCVD method with various N2 contents

• 作者: Somayeh Asgary Mohammad Reza Hantehzadeh Mahmood Ghoranneviss Arash Boochani
• 来源期刊: 稀有金属（英文版）
• 年，卷（期）: 2020,（12）
• 所属期刊栏目: ORIGINAL ARTICLES
• 页码范围: 1440-1448
• 页数: 9页
• 语种: 英文
• DOI: 10.1007/s12598-016-0696-5

摘要

Tungsten nitride(WxN)thin films with good crystalline structure,high quality and relatively low resis-tivity were deposited by hot filament chemical vapor deposition(HFCVD)technique at different mixtures of N2 and Ar gases.Experimental data demonstrate that different N2 contents in gas mixture strongly affect microstructure,phase formation,texture morphology and resistivity of the WxN films.According to X-ray diffraction(XRD)patterns,the growth of tungsten nitride films promotes δ-WN phase for lower N2 contents in gas mixture.At higher N2 con-tents,a phase transition is observed in the tungsten nitride films.Both hexagonal δ-WN and cubic β-W2N phases coexist,and WN phase approximately disappears with N2 contents in the gas mixture increasing.Scanning electron microscope(SEM)images for deposited films at lower N2 contents in gas mixture indicate a definite dense columnar nanostructure.The electrical resistivity results exhibit a significant drop for the WxN thin films with N2 contents in the mixed gas increasing.The changes in N2 content in gas mixture are found to be responsible for variation in the film resistivity values.Thus,the deposited tungsten nitride thin film at higher N2 contents in gas mixture has noncolumnar microstructure and lower resistivity,which may be used as a superior diffusion barrier.