Band Alignment at the Al2O3/β-Ga2O3 Interface with CHF3 Treatment

• 作者: Chao-Chao Liu Hao Liu Shi-Jin Ding Wen-Jun Liu Xiao-Han Wu Yi-Fan Xiao
• 来源期刊: 中国物理快报（英文版）
• 年，卷（期）: 2020,（7）
• 所属期刊栏目: CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES
• 页码范围: 92-95
• 页数: 4页
• 语种: 英文
• DOI: 10.1088/0256-307X/37/7/077302

摘要

The energy band alignment at the atomic layer deposited Al2O3/β-Ga2O3 interface with CHF3 treatment was characterized by x-ray photoelectron spectroscopy and secondary ion mass spectrometry (SIMS).With additional CHF3 plasma treatment,the conduction band offset increases from 1.95±0.1 eV to 2.32±0.1 eV;and the valence band offset decreases from 0.21±0.1eV to-0.16±0.1 eV.As a result,the energy band alignment changes from type Ⅰ to type Ⅱ.This energy band alignment transition could be attributed to the downshift of the core-level of Ga 3d,resulting from the Ga-F bond formation in the F-rich interfacial layer,which is confirmed by the SIMS results.