Field-and Current-Driven Magnetization Reversal and Dynamic Properties of CoFeB-MgO-Based Perpendicular Magnetic Tunnel Junctions

• 来源期刊: 中国物理快报（英文版）
• 年，卷（期）: 2020,（11）
• 所属期刊栏目: CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES
• 页码范围: 98-103
• 页数: 6页
• 语种: 英文
• DOI: 10.1088/0256-307X/37/11/117501

摘要

We report a perpendicular magnetic tunnel junction(pMTJ)cell with a tunnel magnetoresistance(TMR)ratio of nearly 200％ at room temperature based on CoFeB/Ta/CoFeB as the free layer(FL)and a synthetic an-tiferromagnetic(SAF)multilayer[Pt/Co]/Ru/[Pt/Co]/Ta/CoFeB as the reference layer(RL).The field-driven magnetization switching measurements show that the pMTJs exhibit an anomalous TMR hysteresis loop.The spin-polarized layer CoFeB of SAF-RL has a lower critical switching field than that of FL.The reason is related to the interlayer exchange coupling(IEC)through a moderately thick Ta spacer layer among SAF-RLs,which generates a moderate and negative bias magnetic field on CoFeB of RL.However,the IEC among RLs has a negligible influence on the current-driven magnetization switching of FL and its magnetization dynamics.