Surface Modification for WSe2 Based Complementary Electronics

• 来源期刊: 中国物理快报（英文版）
• 年，卷（期）: 2020,（11）
• 所属期刊栏目: CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY
• 页码范围: 110-113
• 页数: 4页
• 语种: 英文
• DOI: 10.1088/0256-307X/37/11/118501

摘要

High-performance WSe2 complementary transistors are demonstrated on an individual flake by ozone exposure,which relies on the charge transfer mechanism.This technology is readily feasible for modulating the conductivity type in WSe2,and the p-n junction presents a high on-off ratio of 104.Based on robust p-type transistors and matched output current of n-type WSe2 transistors,the complementary inverter achieves a high voltage gain of 19.9.Therefore,this strategy may provide an avenue for development of high-performance complementary electronics.