Stress and strain analysis of Si-based Ⅲ-Ⅴ template fabricated by ion-slicing

• 作者: Chang Wang Hao Liang Jiajie Lin Li Yue Shumin Wang Shuyan Zhao Tiangui You Tingting Jin Xin Ou Yuxin Song
• 来源期刊: 中国物理B（英文版）
• 关键词: Ⅲ-VOI template finite element method (FEM) critical thickness
• 年，卷（期）: 2020,（7）
• 页码范围: 549-557
• 页数: 9页
• 语种: 英文
• DOI: 10.1088/1674-1056/ab8a35

摘要

Strain and stress were simulated using finite element method (FEM) for three Ⅲ-Ⅴ-on-Insulator (Ⅲ-VOI) structures,i.e.,InP/SiO2/Si,InP/Al2O3/SiO2/Si,and GaAs/Al2O3/SiO2/Si,fabricated by ion-slicing as the substrates for optoelectronic devices on Si.The thermal strain/stress imposes no risk for optoelectronic structures grown on InPOI at a normal growth temperature using molecular beam epitaxy.Structures grown on GaAsOI are more dangerous than those on InPOI due to a limited critical thickness.The intermedia Al2O3 layer was intended to increase the adherence while it brings in the largest risk.The simulated results reveal thermal stress on Al2O3 over 1 GPa,which is much higher than its critical stress for interfacial fracture.InPOI without an Al2O3 layer is more suitable as the substrate for optoelectronic integration on Si.