Recent advances, perspectives, and challenges in ferroelectric synapses

• 作者: Bo-Bo Tian Chun-Gang Duan Ni Zhong
• 来源期刊: 中国物理B（英文版）
• 年，卷（期）: 2020,（9）
• 所属期刊栏目: TOPICAL REVIEW—Physics in neuromorphic devices
• 页码范围: 15-31
• 页数: 17页
• 语种: 英文
• DOI: 10.1088/1674-1056/aba603

摘要

The multiple ferroelectric polarization tuned by external electric field could be used to simulate the biological synaptic weight.Ferroelectric synaptic devices have two advantages compared with other reported ones: One is that the intrinsic switching of ferroelectric domains without invoking of defect migration as in resistive oxides,contributes reliable performance in these ferroelectric synapses.Another tremendous advantage is the extremely low energy consumption because the ferroelectric polarization is manipulated by electric field which eliminates the Joule heating by current as in magnetic and phase change memories.Ferroelectric synapses have potential for the construction of low-energy and effective brain-like intelligent networks.Here we summarize recent pioneering work of ferroelectric synapses involving the structure of ferroelectric tunnel junctions (FTJs),ferroelectric diodes (FDs),and ferroelectric field effect transistors (FeFETs),respectively,and shed light on future work needed to accelerate their application for efficient neural network.