Growth and physical characterization of high resistivity Fe∶ β-Ga2O3 crystals

• 作者: Bo Liu Hao Zhang Hui-Li Tang) Jia-Wen Chen Jun Xu Nuo-Tian He Zhi-Chao Zhu
• 来源期刊: 中国物理B（英文版）
• 年，卷（期）: 2020,（8）
• 所属期刊栏目: CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC,AND OPTICAL PROPERTIES
• 页码范围: 479-483
• 页数: 5页
• 语种: 英文
• DOI: 10.1088/1674-1056/ab942d

摘要

High quality 0.02 mol％,0.05 mol％,and 0.08 mol％ Fe∶ β-Ga2O3 single crystals were grown by the floating zone method.The crystal structure,optical,electrical,and thermal properties were measured and discussed.Fe∶ β-Ga2O3 single crystals showed transmittance of higher than 80％ in the near infrared region.With the increase of the Fe doping concentration,the optical bandgaps reduced and room temperature resistivity increased.The resistivity of 0.08 mol％ Fe∶β-Ga2O3 crystal reached to 3.63× 1011 Ω·cm.The high resistivity Fe∶ β-Ga2O3 single crystals could be applied as the substrate for the high-power field effect transistors (FETs).