Optimization of terahertz monolithic integrated frequency multiplier based on trap-assisted physics model of THz Schottky barrier varactor

• 作者: De-Hai Zhang Jin Meng Jing-Tao Zhou Lu-Wei Qi Xiao-Yu Liu Yi Weng Zhi Jin Zhi-Cheng Liu
• 来源期刊: 中国物理B（英文版）
• 年，卷（期）: 2020,（10）
• 所属期刊栏目: ELECTROMAGNETISM, OPTICS, ACOUSTICS, HEAT TRANSFER, CLASSICAL MECHANICS, AND FLUID DYNAMICS
• 页码范围: 387-394
• 页数: 8页
• 语种: 英文
• DOI: 10.1088/1674-1056/abab74

摘要

The optimization of high power terahertz monolithic integrated circuit (TMIC) is systemically studied based on the physical model of the Schottky barrier varactor (SBV) with interface defects and tunneling effect. An ultra-thin dielectric layer is added to describe the extra tunneling effect and the damping of thermionic emission current induced by the interface defects. Power consumption of the dielectric layer results in the decrease of capacitance modulation ration (Cmax/Cmin), and thus leads to poor nonlinear C–V characteristics. The proposed Schottky metal-brim (SMB) terminal structure could improve the capacitance modulation ration by reducing the influence of the interface charge and eliminating the fringing capacitance effect. Finally, a 215 GHz tripler TMIC is fabricated based on the SMB terminal structure. The output power is above 5 mW at 210–218 GHz and the maximum could exceed 10 mW at 216 GHz, which could be widely used in terahertz imaging, radiometers, and so on. This paper also provides theoretical support for the SMB structure to optimize the TMIC performance.