Epitaxial synthesis and electronic properties of monolayer Pd2Se3

• 作者: Dong-Fei Wang En Li Guo-Jian Qian Hofer W A Hong-Jun Gao Hui Chen Jing Qi Peng Fan Qi Zheng Qin Wang Rui-Zi Zhang Shixuan Du Xiao Lin Yu-Yang Zhang
• 来源期刊: 中国物理B（英文版）
• 年，卷（期）: 2020,（9）
• 所属期刊栏目: INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY
• 页码范围: 611-617
• 页数: 7页
• 语种: 英文
• DOI: 10.1088/1674-1056/abab80

摘要

Two-dimensional (2D) materials received large amount of studies because of the enormous potential in basic science and industrial applications.Monolayer Pd2Se3 is a fascinating 2D material that was predicted to possess excellent thermoelectric,electronic,transport,and optical properties.However,the fabrication of large-scale and high-quality monolayer Pd2Se3 is still challenging.Here,we report the synthesis of large-scale and high-quality monolayer Pd2Se3 on graphene-SiC (0001) by a two-step epitaxial growth.The atomic structure of Pd2Se3 was investigated by scanning tunneling microscope (STM) and confirmed by non-contact atomic force microscope (nc-AFM).Two subgroups of Se atoms have been identified by nc-AFM image in agreement with the theoretically predicted atomic structure.Scanning tunneling spectroscopy (STS) reveals a bandgap of 1.2 eV,suggesting that monolayer Pd2Se3 can be a candidate for photoelectronic applications.The atomic structure and defect levels of a single Se vacancy were also investigated.The spatial distribution of STS near the Se vacancy reveals a highly anisotropic electronic behavior.The two-step epitaxial synthesis and characterization of Pd2Se3 provide a promising platform for future investigations and applications.