Evolution of electrical and magnetotransport properties with lattice strain in La0.7Sr0.3MnO.3 film

• 作者: Cheng-Peng Yang Huai-Wen Yang Ji-Rong Sun Qing-Ye Zhang Wen-Shuang Liang Xiao-Tian Li Yi-Qian Wang Zhi-Bin Ling
• 来源期刊: 中国物理B（英文版）
• 年，卷（期）: 2020,（9）
• 所属期刊栏目: CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES
• 页码范围: 480-486
• 页数: 7页
• 语种: 英文
• DOI: 10.1088/1674-1056/aba09b

摘要

In this paper,we investigate the effects of lattice strain on the electrical and magnetotransport properties of La0.7Sr0.3MnO3 (LSMO) films by changing film thickness and substrate.For electrical properties,a resistivity upturn emerges in LSMO films,i.e.,LSMO/STO and LSMO/LSAT with small lattice strain at a low temperature,which originates from the weak localization effect.Increasing film thickness weakens the weak localization effect,resulting in the disappearance of resistivity upturn.While in LSMO films with a large lattice strain (i.e.,LSMO/LAO),an unexpected semiconductor behavior is observed due to the linear defects.For magnetotransport properties,an anomalous in-plane magnetoresistance peak (pMR) occurs at low temperatures in LSMO films with small lattice strain,which is caused by two-dimensional electron gas (2DEG).Increasing film thickness suppresses the 2DEG,which weakens the pMR.Besides,it is found that the film orientation has no influence on the formation of 2DEG.While in LSMO/LAO films,the 2DEG cannot form due to the existence of linear defects.This work can provide an efficient way to regulate the film transport properties.

作者信息

序号	姓名	单位	发文数	被引次数	H指数	G指数
1	Zhi-Bin Ling	中国科学院物理研究所	1	0	0.0	0.0
2	Qing-Ye Zhang	中国科学院物理研究所	1	0	0.0	0.0
3	Cheng-Peng Yang	中国科学院物理研究所	1	0	0.0	0.0
4	Xiao-Tian Li	中国科学院物理研究所	1	0	0.0	0.0
5	Wen-Shuang Liang	中国科学院物理研究所	1	0	0.0	0.0
6	Yi-Qian Wang	中国科学院物理研究所	1	0	0.0	0.0
7	Huai-Wen Yang	中国科学院物理研究所	1	0	0.0	0.0
8	Ji-Rong Sun	中国科学院物理研究所	1	0	0.0	0.0