Structural and electrical transport properties of Cu-doped Fe1-xCuxSe single crystals

• 来源期刊: 中国物理B（英文版）
• 年，卷（期）: 2020,（12）
• 所属期刊栏目: RAPID COMMUNICATION
• 页码范围: 116-120
• 页数: 5页
• 语种: 英文
• DOI: 10.1088/1674-1056/abc3af

摘要

We report the structural and electrical transport properties of Fe1-xCuxSe(x = 0,0.02,0.05,0.10)single crystals grown by a chemical vapor transport method.Substituting Cu for Fe suppresses both the nematicity and superconductivity of FeSe single crystal,and provokes a metal-insulator transition.Our Hall measurements show that the Cu substitution also changes an electron dominance at low temperature of un-doped FeSe to a hole dominance of Cu-doped Fe1-xCuxSe at x = 0.02 and 0.1,and reduces the sign-change temperature(TR)of the Hall coefficient(RH).