Characterization and optimization of AlGaN/GaN metal-insulator semiconductor heterostructure field effect transistors using supercritical CO2/H2O technology

• 来源期刊: 中国物理B（英文版）
• 年，卷（期）: 2020,（12）
• 所属期刊栏目: CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES
• 页码范围: 476-481
• 页数: 6页
• 语种: 英文
• DOI: 10.1088/1674-1056/abb22f

摘要

The impact of supercritical CO2/H2O technology on the threshold-voltage instability of AlGaN/GaN metal-insulator semiconductor high-electron-mobility transistors(MIS-HEMTs)is investigated.The MIS-HEMTs were placed in a super-critical fluid system chamber at 150 ℃ for 3 h.The chamber was injected with CO2 and H2O at pressure of 3000 psi(1 psi ≈ 6.895 kPa).Supercritical H2O fluid has the characteristics of liquid H2O and gaseous H2O at the same time,that is,high penetration and high solubility.In addition,OH-produced by ionization of H2O can fill the nitrogen vacancy near the Si3N4/GaN/AlGaN interface caused by high temperature process.After supercritical CO2/H2O treatment,the thresh-old voltage shift is reduced from 1 V to 0.3 V.The result shows that the threshold voltage shift of MIS-HEMTs could be suppressed by supercritical CO2/H2O treatment.