Preface to the Special Issue on Beyond Moore:Resistive Switching Devices for Emerging Memory and Neuromorphic Computing

• 作者: Yue Hao Huaqiang Wu Yuchao Yang Qi Liu Xiao Gong Genquan Han Ming Li
• 来源期刊: 半导体学报（英文版）
• 年，卷（期）: 2021,（1）
• 所属期刊栏目: EDITORIAL
• 页码范围: 25-26
• 页数: 2页
• 语种: 英文
• DOI: 10.1088/1674-4926/42/1/010101

摘要

Traditional charge-based memories,such as dynamic ran-dom-access memory(DRAM)and flash,are approaching their scaling limits.A variety of resistance-based memories,such as phase-change memory(PCM),magnetic random-access memory(MRAM)and resistive random-access memory(RRAM),have been long considered for emerging memory ap-plications thanks to their non-volatility,fast speed,low power,and compact size for potentially high-density integra-tion.More recently,they are also extensively studied as mem-ristors for neuromorphic computing,which has quite differ-ent requirements on their resistive switching characteristics compared to digital memory application.In the past decade,tremendous progresses,from materials and physical mechan-isms to devices and neuromorphic systems,have been made to advance the field.