High-current MoS2 transistors with non-planar gate configuration

• 作者: Jun Lin Bin Wang Zhenyu Yang Guoli Li Xuming Zou Yang Chai Xingqiang Liu Lei Liao
• 来源期刊: 科学通报（英文版）
• 年，卷（期）: 2021,（8）
• 所属期刊栏目: ARTICLES
• 页码范围: 777-782
• 页数: 6页
• 语种: 英文

摘要

The ever-decreasing size of transistors requires effectively electrostatic control over ultra-thin semiconductor body.Rational design of the gate configuration can fully persevere the intrinsic property of two-dimensional (2D) semiconductors.Here we design and demonstrate a 2D MoS2 transistor with omega-shaped gate,in which the local gate coupling is enhanced by the non-planar geometry.The omega-shaped non-planar transistors exhibit a high current of 0.89 A/μm and transconductance of 32.7 μS/μm.The high performance and desirable current saturation promise the construction of robust logic gate.The inverters show a voltage gain of 26.6 and an ideal total margin nearly 89％.We also assemble NOT-AND (NAND) gate on an individual MoS2 flake,and the constructed NAND gate demonstrates the universal functionality of the transistors as well.This work provides an alternative strategy to fully take the advantages of 2D materials for high-performance field-effect transistors.