Epitaxial lift-off for controllable single-crystalline perovskites

• 来源期刊: 科学通报（英文版）
• 年，卷（期）: 2021,（1）
• 所属期刊栏目: RESEARCH HIGHLIGHT
• 页码范围: 6-8
• 页数: 3页
• 语种: 英文

摘要

The intriguing attributes of organic-inorganic hybrid per-ovskites,such as excellent carrier dynamics,outstanding optical tunability,and cost-effective solution processability,have put them on par with or even to be partially superior over the conven-tional semiconductors,enabling a myriad of applications including solar cells,photodetectors,light-emitting diodes,lasers,and tran-sistors[1-4].Compared to the polycrystalline perovskites,the sin-gle-crystalline ones perform ameliorative performances and enhanced stability due to the eliminative grain boundaries and less defects,will profoundly advance the application potential and are therefore highly desired[5].Various strategies such as tempera-ture-lowering method,antisolvent diffusion,inverse temperature crystallization,geometry-confinement growth,and vapor-phase epitaxy have been applied to grow the single crystalline per-ovskites[6-8],however,either the deficient control in geometry,size,and component of the as-synthesized perovskites or the sub-strate restrictions assisted with these methods leaves the difficulty of integrating perovskites into high-performance devices.