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摘要:
By applying nonequilibrium Green’s functions (NEGF) in combination with the density functional theory (DFT), we investigate the electronic transport properties of gated phenalenyl molecular devices with two different contact geometries. The calculated results show that electronic transport properties of the two different devices can be modulated by external transverse gates. When the molecule contacts the Au electrodes through two second-nearest sites, the current-voltage (<em>I</em>-<em>V</em>) characteristic curves are symmetric and suppressed by the gate electrodes. However, a rectifying behavior will occur when the electrodes connect the molecule on both sides, one second-nearest site and one third-nearest site, respectively. Mechanisms for such phenomena are proposed and these findings suggest a new opportunity for developing molecular devices.
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篇名 Electronic Transport Properties of Phenalenyl Molecular Devices via Gated Modulation
来源期刊 应用数学与应用物理(英文) 学科 工学
关键词 Electronic Transport Transverse Gate Nonequilibrium Green’s Function Phenalenyl Molecular
年,卷(期) 2021,(3) 所属期刊栏目
研究方向 页码范围 503-514
页数 12页 分类号 TN3
字数 语种
DOI
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研究主题发展历程
节点文献
Electronic
Transport
Transverse
Gate
Nonequilibrium
Green’s
Function
Phenalenyl
Molecular
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研究去脉
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期刊影响力
应用数学与应用物理(英文)
月刊
2327-4352
武汉市江夏区汤逊湖北路38号光谷总部空间
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983
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