Nonideal double-slope effect in organic field-effect transistors

• 作者: Ming-Chao Xiao Jie Liu Yuan-Yuan Hu Shuai Wang Lang Jiang
• 来源期刊: 物理学前沿
• 年，卷（期）: 2021,（1）
• 所属期刊栏目: Special Collection:Organic Semiconductors and OFETs(Eds.Hong Meng & Guangcun Shan)
• 页码范围: 68-82
• 页数: 15页
• 语种: 英文

摘要

With the development of device engineering and molecular design,organic field effect transistors (OFETs) with high mobility over 10 cm2·V-1·s-1 have been reported.However,the nonideal doubleslope effect has been frequently observed in some of these OFETs,which makes it difficult to extract the intrinsic mobility OFETs accurately,impeding the further application of them.In this review,the origin of the nonideal double-slope effect has been discussed thoroughly,with affecting factors such as contact resistance,charge trapping,disorder effects and coulombic interactions considered.According to these discussions and the understanding of the mechanism behind double-slope effect,several strategies have been proposed to realize ideal OFETs,such as doping,molecular engineering,charge trapping reduction,and contact engineering.After that,some novel devices based on the nonideal double-slope behaviors have been also introduced.