Interface and bulk controlled perovskite nanocrystal growth for high brightness light-emitting diodes [Invited]

• 作者: Le liang Xi Luo Zhongming Luo Dingjian Zhou Baoxing Liu Jincheng Huang Jianfeng Zhang Xulin Zhang Ping Xu Guijun Li
• 来源期刊: 中国光学快报（英文版）
• 年，卷（期）: 2021,（3）
• 所属期刊栏目: Metal Halide Perovskite and Their Applications
• 页码范围: 1-7
• 页数: 7页
• 语种: 英文
• DOI: 10.3788/COL202119.030001

摘要

Halide perovskites have attracted great attention due to their high color purity,high luminance yield,low non-radiative recombination rate,and solution processability.Although the external quantum efficiency of perovskite light-emitting diodes[PeLEDs]is comparable with that of the organic light-emitting diodes[OLEDs]and quantum-dots light-emitting diodes[QLEDs],the brightness is still low compared with the traditional OLEDs and QLEDs.Herein,we demonstrate high brightness and high-efficiency CsPbBr3-based PeLEDs using interface and bulk controlled nanocrystal growth of the perovskite emission layer.The interface engineering by ethanolamine and bulk engineering by polyethylene glycol led to highly crystallized and cubic-shaped perovskite nanocrystals with smooth and compact morphology.As a result,PeLEDs with a high brightness of 64756 cd/m2 and an external quantum efficiency of 13.4％ have been achieved.