A review of silicon-based wafer bonding processes,an approach to realize the monolithic integration of Si-CMOS and Ⅲ-Ⅴ-on-Si wafers

• 作者: Shuyu Bao Yue Wang Khaw Lina Li Zhang Bing Wang Wardhana Aji Sasangka Kenneth Eng Kian Lee Soo Jin Chua Jurgen Michel Eugene Fitzgerald Chuan Seng Tan Kwang Hong Lee
• 来源期刊: 半导体学报（英文版）
• 年，卷（期）: 2021,（2）
• 所属期刊栏目: REVIEWS
• 页码范围: 83-102
• 页数: 20页
• 语种: 英文
• DOI: 10.1088/1674-4926/42/2/023106

摘要

The heterogeneous integration of Ⅲ-Ⅴ devices with Si-CMOS on a common Si platform has shown great promise in the new generations of electrical and optical systems for novel applications,such as HEMT or LED with integrated control cir-cuitry.For heterogeneous integration,direct wafer bonding(DWB)techniques can overcome the materials and thermal mis-match issues by directly bonding dissimilar materials systems and device structures together.In addition,DWB can perform at wafer-level,which eases the requirements for integration alignment and increases the scalability for volume production.In this paper,a brief review of the different bonding technologies is discussed.After that,three main DWB techniques of single-,double-and multi-bonding are presented with the demonstrations of various heterogeneous integration applications.Mean-while,the integration challenges,such as micro-defects,surface roughness and bonding yield are discussed in detail.