Integration of GaN analog building blocks on p-GaN wafers for GaN Ics

• 作者: Xiangdong Li Karen Geens Nooshin Amirifar Ming Zhao Shuzhen You Niels Posthuma Hu Liang Guido Groeseneken Stefaan Decoutere
• 来源期刊: 半导体学报（英文版）
• 年，卷（期）: 2021,（2）
• 所属期刊栏目: ARTICLES
• 页码范围: 114-118
• 页数: 5页
• 语种: 英文
• DOI: 10.1088/1674-4926/42/2/024103

摘要

We demonstrate the key module of comparators in GaN ICs,based on resistor-transistor logic(RTL)on E-mode wafers in this work.The fundamental inverters in the comparator consist of a p-GaN gate HEMT and a 2DEG resistor as the load.The function of the RTL comparators is finally verified by a undervoltage lockout(UVLO)circuit.The compatibility of this cir-cuit with the current p-GaN technology paves the way for integrating logic ICs together with the power devices.