Study of short-term synaptic plasticity in Ion-Gel gated graphene electric-double-layer synaptic transistors

• 作者: Chenrong Gong Lin Chen Weihua Liu Guohe Zhang
• 来源期刊: 半导体学报（英文版）
• 年，卷（期）: 2021,（1）
• 所属期刊栏目: ARTICLES
• 页码范围: 119-124
• 页数: 6页
• 语种: 英文
• DOI: 10.1088/1674-4926/42/1/014101

摘要

Multi-terminal electric-double-layer transistors have recently attracted extensive interest in terms of mimicking syn-aptic and neural functions.In this work,an Ion-Gel gated graphene synaptic transistor was proposed to mimic the essential syn-aptic behaviors by exploiting the bipolar property of graphene and the ionic conductivity of Ion-Gel.The Ion-Gel dielectrics were deposited onto the graphene film by the spin coating process.We consider the top gate and graphene channel as a pre-synaptic and postsynaptic terminal,respectively.Basic synaptic functions were successfully mimicked,including the excitatory postsynaptic current(EPSC),the effect of spike amplitude and duration on EPSC,and paired-pulse facilitation(PPF).This work may facilitate the application of graphene synaptic transistors in flexible electronics.