Neutron irradiation-induced effects on the reliability performance of electrochemical metallization memory devices

• 作者: Ye Tao Xuhong Li Zhongqiang Wang Gang Li Haiyang Xu Xiaoning Zhao Ya Lin Yichun Liu
• 来源期刊: 半导体学报（英文版）
• 年，卷（期）: 2021,（1）
• 所属期刊栏目: ARTICLES
• 页码范围: 131-136
• 页数: 6页
• 语种: 英文
• DOI: 10.1088/1674-4926/42/1/014103

摘要

In this work,electrochemical metallization memory(ECM)devices with an Ag/AglnSbTe(AIST)/amorphous carbon(a-C)/Pt structure were irradiated with 14 MeV neutrons.The switching reliability performance before and after neutron irradi-ation was compared and analyzed in detail.The results show that the irradiated memory cells functioned properly,and the ini?tial resistance,the resistance at the low-resistance state(LRS),the RESET voltage and the data retention performance showed little degradation even when the total neutron fluence was as high as 2.5 × 1011 n/cm2.Other switching characteristics such as the forming voltage,the resistance at the high-resistance state(HRS),and the SET voltage were also studied,all of which merely showed a slight parameter drift.Irradiation-induced Ag ions doping of the a-C layer is proposed to explain the dam-aging effects of neutron irradiation.The excellent hard characteristics of these Ag/AIST/a-C/Pt-based ECM devices suggest poten-tial beneficial applications in the aerospace and nuclear industries.