Characterization of low-resistance ohmic contacts to heavily carbon-doped n-type InGaAsBi films treated by rapid thermal annealing

• 来源期刊: 中国物理B（英文版）
• 年，卷（期）: 2021,（2）
• 所属期刊栏目: CONDENSED MATTER:ELECTRONIC STRUCTURE,ELECTRICAL,MAGNETIC,AND OPTICAL PROPERTIES
• 页码范围: 532-536
• 页数: 5页
• 语种: 英文
• DOI: 10.1088/1674-1056/abcf97

摘要

Carbon-doped InGaAsBi films on InP∶Fe(100)substrates have been grown by gas source molecular beam epitaxy(GSMBE).The electrical properties and non-alloyed Ti/Pt/Au contact resistance of n-type carbon-doped InGaAsBi films were characterized by Van der Pauw-Hall measurement and transmission line method(TLM)with and without rapid ther-mal annealing(RTA).It was found that the specific contact resistance decreases gradually with the increase of carrier concentration.The electron concentration exhibits a sharp increase,and the specific contact resistance shows a noticeable reduction after RTA.With RTA,the InGaAsBi film grown under CBr4 supply pressure of 0.18 Torr exhibited a high electron concentration of 1.6×1021 cm-3 and achieved an ultra-low specific contact resistance of 1×10-8 Ω?cm2,revealing that contact resistance depends greatly on the tunneling effect.