Energy band adjustment of 808 nm GaAs laser power converters via gradient doping

• 作者: Yingjie Zhao Shan Li Huixue Ren Shaojie Li Peide Han
• 来源期刊: 半导体学报（英文版）
• 年，卷（期）: 2021,（3）
• 所属期刊栏目: ARTICLES
• 页码范围: 79-85
• 页数: 7页
• 语种: 英文
• DOI: 10.1088/1674-4926/42/3/032701

摘要

The gradient doping regions were employed in the emitter layer and the base layer of GaAs based laser power converters (LPCs).Silvaco TCAD was used to numerically simulate the linear gradient doping and exponential gradient doping structure,and analyze the transport process of photogenerated carriers.Energy band adjustment via gradient doping improved the separation and transport efficiency of photogenerated carriers and reduced the total recombination rate of GaAs LPCs.Compared with traditional structure of LPCs,the photoelectric conversion efficiency of LPCs with linear and exponential gradient doping structure were improved from 52.7％ to 57.2％ and 57.7％,respectively,under 808 nm laser light at the power density of 1 W/cm2.