Low-threshold laser from erbium-gain lithium niobate microcavity

• 作者: Li-Kun Chen Yun-Feng Xiao
• 来源期刊: 中国科学：物理学 力学 天文学（英文版）
• 年，卷（期）: 2021,（3）
• 所属期刊栏目: Editor's Focus
• 页码范围: 12
• 页数: 1页
• 语种: 英文

摘要

Integrated photonic circuits with nonlinear response are imperative in the boosting field of telecommunications and quantum networks [1].Among all conventional nonlinear materials, lithium niobate (LiNO3, LN) has drawn massive interest for its excellent performance in x(2) and commercialization compatibility.Thanks to the developed micromachining techniques, on-chip lithium niobate structures with subnanometer roughness are now achievable [2,3], making integrated devices like frequency doublers, transducers and filters into reality.Besides these passive photonic circuits, the laser source on the LN integrated circuit leaves absence.Rare earth erbium is a well-acknowledged doping particle that produces the C-band laser.Combining photonic integrated circuits with erbium can pave the way towards the LN-based chip scale microlaser, which is crucial and groundbreaking on the integration of light sources and various functioned devices.