Synthesis and characterizations of boron and nitrogen co-doped high pressure and high temperature large single-crystal diamonds with increased mobility

• 作者: Xin-Yuan Miao Hong-An Ma Zhuang-Fei Zhang Liang-Chao Chen Li-Juan Zhou Min-Si Li Xiao-Peng Jia
• 来源期刊: 中国物理B（英文版）
• 年，卷（期）: 2021,（6）
• 所属期刊栏目: INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY
• 页码范围: 713-719
• 页数: 7页
• 语种: 英文
• DOI: 10.1088/1674-1056/abf12c

摘要

We synthesized and investigated the boron-doped and boron/nitrogen co-doped large single-crystal diamonds grown under high pressure and high temperature (HPHT) conditions (5.9 GPa and 1290 ℃).The optical and electrical properties and surface characterization of the synthetic diamonds were observed and studied.Incorporation of nitrogen significantly changed the growth trace on surface of boron-containing diamonds.X-ray photoelectron spectroscopy (XPS) measurements showed good evident that nitrogen atoms successfully incorporate into the boron-rich diamond lattice and bond with carbon atoms.Raman spectra showed differences on the as-grown surfaces and interior between boron-doped and boron/nitrogen co-doped diamonds.Fourier transform infrared spectroscopy (FTIR) measurements indicated that the nitrogen incorpora-tion significantly decreases the boron acceptor concentration in diamonds.Hall measurements at room temperature showed that the carriers concentration of the co-doped diamonds decreases,and the mobility increases obviously.The highest hole mobility of sample BNDD-1 reached 980 cm2·V-1 ·s-1,possible reasons were discussed in the paper.